Silicon carbide is an extremely hard material, exhibits exceptional resistance to corrosion and thermal shock. Exceptional sliding properties and high thermal conductivity make it a good solution for use as friction pairs.
SSiC – Sintered silicon carbide is obtained by sintering a pre-compressed very fine SiC granulate at a temperature of 2000 °C to form strong bonds between the grains of the material.
First, the lattice thickens, then the porosity decreases, and finally the bonds between the grains sinter. In the process of such processing, a significant shrinkage of the product occurs – by about 20%.
SSiC is resistant to all chemicals. Since no metallic silicon is present in its structure, it can be used at temperatures up to 1600C without affecting its strength.
RBSiC/SiSiC – Reaction-sintered infiltrated silicon carbide. In such material, the pores of the original SiC material are filled in the process of infiltration by burning out metallic silicon, thus secondary SiC appears and the material acquires exceptional mechanical properties, becoming wear-resistant. Due to its minimal shrinkage, it can be used in the production of large and complex parts with close tolerances. However, the silicon content limits the maximum operating temperature to 1,350 °C, chemical resistance is also limited to about pH 10. The material is not recommended for use in aggressive alkaline environments.
Both types of material are excellent for making rings and bushings for mechanical seals, and other similar devices.
Physical and mechanical characteristics of the material of the brand SILCAR (SiSiC)
|Indicator name||Indicator value|
|Pure SiC content, %||88-92|
|Density, g/cm 3||3,02-3,14|
|Flexural strength, MPa||220|
|Elastic modulus, GPa||300-340|
|Thermal expansion coefficient in the range 20° -1000°С, 10 1/К||3,6-4,2|
|Thermal conductivity coefficient at 100 °С, Вт/м*К||160-174|